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High-quality InGaAs/InP interfaces by the use of tertiary-butylarsine in MOVPE multi-quantum wells

✍ Scribed by G Carta; A D’Andrea; F Fernández-Alonso; N El Habra; M Righini; G Rossetto; D Schiumarini; S Selci; P Zanella


Book ID
108341714
Publisher
Elsevier Science
Year
2002
Tongue
English
Weight
155 KB
Volume
244
Category
Article
ISSN
0022-0248

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