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Bistability effect in laser-transistor resonant-tunneling structure

โœ Scribed by V. Ryzhii; I. Khmyrova


Publisher
Elsevier Science
Year
1994
Tongue
English
Weight
231 KB
Volume
37
Category
Article
ISSN
0038-1101

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We discuss resonant tunneling through quantum dot energy levels considering the charging energy of the dot. The hamiltonian of the system is reduced to a form of the Anderson hamiltonian of resonant tunneling. The mean-field approximation is applied and currentvoltage characteristics are evaluated.