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Current bistability in resonant tunneling through a semiconductor quantum dot

✍ Scribed by K. Natori; N. Sano

Publisher: Elsevier Science
Year: 1998
Tongue: English
Weight: 81 KB
Volume: 23
Category: Article
ISSN: 0749-6036
DOI: 10.1006/spmi.1996.0348

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✦ Synopsis

We discuss resonant tunneling through quantum dot energy levels considering the charging energy of the dot. The hamiltonian of the system is reduced to a form of the Anderson hamiltonian of resonant tunneling. The mean-field approximation is applied and currentvoltage characteristics are evaluated. The self-consistent solution is investigated for the low tunneling rate case in the low-temperature condition. The current bistability and the related current hysteresis are pointed out. The Coulomb staircase is shown in the current-voltage characteristics. These features are all due to Coulomb repulsion within the dot.

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