Ternary semiconductor compounds CuInS2 (
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Shaoxiong Lin; Xuezhao Shi; Xin Zhang; Huanhuan Kou; Chunming Wang
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Article
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2010
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Elsevier Science
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English
β 355 KB
In this paper the formation and characterization of the I-III-VI 2 semiconductor compound CuInS 2 (CIS) on gold substrate at room temperature by electrochemical atomic layer deposition (EC-ALD) method are reported. Optimum deposition potentials for each element are determined using cyclic voltammetr