We report a study on the contact resistance instability induced by the bias stress in staggered pentacene thin film transistors, combining the bias stress measurements with the transfer line method. The contact resistance is increasing with the stress time, and two device parameters are found to con
β¦ LIBER β¦
Bias stress instability in pentacene thin film transistors: Contact resistance change and channel threshold voltage shift
β Scribed by Wang, S. D.; Minari, T.; Miyadera, T.; Aoyagi, Y.; Tsukagoshi, K.
- Book ID
- 121211726
- Publisher
- American Institute of Physics
- Year
- 2008
- Tongue
- English
- Weight
- 647 KB
- Volume
- 92
- Category
- Article
- ISSN
- 0003-6951
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