✦ LIBER ✦
Study of mechanism of stress-induced threshold voltage shift and recovery in top-gate amorphous-InGaZnO4 thin-film transistors with source- and drain-offsets
✍ Scribed by Mallory Mativenga; Dong Han Kang; Ung Gi Lee; Jin Jang
- Book ID
- 116890804
- Publisher
- Elsevier Science
- Year
- 2012
- Tongue
- English
- Weight
- 707 KB
- Volume
- 152
- Category
- Article
- ISSN
- 0038-1098
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