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Bias-dependent linear scalable millimeter-wave FET model

✍ Scribed by Wood, J.; Root, D.E.


Book ID
114553924
Publisher
IEEE
Year
2000
Tongue
English
Weight
291 KB
Volume
48
Category
Article
ISSN
0018-9480

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A simple and efficient procedure for modeling of scattering and noise parameters for a class of microwave transistors manufactured in the same technology is presented in this article. It is based on multilayer perceptron artificial neural networks (ANN), whose inputs are device gate width, biases, a