An accurate distributed model of field effect transistors, including the parasitic impedances of the electrodes and the mutual coupling between them for analyzing the propagation effects along the electrodes working at millimeter wave frequencies, is presented. A numerical method is used to calculat
β¦ LIBER β¦
Semidistributed model of millimeter-wave FET for parameter and noise figure predictions
β Scribed by Escotte, L.; Mollier, J.-C.
- Book ID
- 114551037
- Publisher
- IEEE
- Year
- 1990
- Tongue
- English
- Weight
- 462 KB
- Volume
- 38
- Category
- Article
- ISSN
- 0018-9480
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