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Bias-dependent deep level in HVPE n-GaN

✍ Scribed by L. Wu; W.E. Meyer; F.D. Auret; M. Hayes

Book ID: 103884718
Publisher: Elsevier Science
Year: 2003
Tongue: English
Weight: 194 KB
Volume: 340-342
Category: Article
ISSN: 0921-4526
DOI: 10.1016/j.physb.2003.09.037

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## Abstract Deep centers in undoped n‐GaN grown by Hydride Vapor Phase Epitaxy were characterized by Deep Level Transient Spectroscopy (DLTS), revealing four known levels with activation energies in the range 0.17–0.94 eV. Deeper levels in the bandgap were observed by photocapacitance (PHCAP) exper