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Bias dependence of magnetic tunnel junctions

✍ Scribed by Rzchowski, M. S.; Wu, X. W.

Book ID
121447413
Publisher
The American Physical Society
Year
2000
Tongue
English
Weight
92 KB
Volume
61
Category
Article
ISSN
1098-0121

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## Abstract Double‐barrier magnetic tunnel junctions (DMTJs) with and without an amorphous ferromagnetic material such as CoFeSiB 10, CoFe 5/CoFeSiB 5, and CoFe 10 (nm) were prepared and compared to investigate the bias voltage dependence of the tunneling magnetoresistance (TMR) ratio. Typical DMTJ