The deformation mechanisms of GaN thin films obtained by metal-organic chemical vapor deposition (MOCVD) method were studied using nanoindentation with a Berkovich diamond indenter, micro-Raman spectroscopy and the cross-sectional transmission electron microscopy (XTEM) techniques. Due to the sharpn
โฆ LIBER โฆ
Berkovich nanoindentation-induced dislocation energetics and pop-in effects in ZnSe thin films
โ Scribed by Jian, Sheng-Rui; Lin, Ya-Yun
- Book ID
- 122114623
- Publisher
- Elsevier Science
- Year
- 2014
- Tongue
- English
- Weight
- 995 KB
- Volume
- 590
- Category
- Article
- ISSN
- 0925-8388
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