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Behaviour of indium selenide thin films intercalated with lithium

โœ Scribed by I. Samaras; J.P. Guesdon; M. Tsakiri; C. Julien; M. Balkanski


Publisher
Elsevier Science
Year
1988
Tongue
English
Weight
531 KB
Volume
28-30
Category
Article
ISSN
0167-2738

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ChemInform Abstract: Metalorganic Chemic
โœ S. L. STOLL; A. R. BARRON ๐Ÿ“‚ Article ๐Ÿ“… 2010 ๐Ÿ› John Wiley and Sons โš– 33 KB ๐Ÿ‘ 2 views

InSe films are grown at 230-420 โ€ข C by low-pressure MOCVD from [(tBu) 2 In(ยต-SetBu)] 2 and [(Me 2 EtC)In(ยต 3 -Se)] 4 . Energy-dispersive X-ray analysis shows that films grown from the first precursor are In rich, while those from the second one are stoichiometric InSe. At temperatures ยก 330 โ€ข C ball