𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Behavioral electromagnetic models of high-speed p-i-n photodiodes

✍ Scribed by Chenhui Jiang; Viktor Krozer; Tom K. Johansen; Heinz-Gunter Bach; Giorgis G. Mekonnen; Lei Yan

Publisher
John Wiley and Sons
Year
2011
Tongue
English
Weight
545 KB
Volume
53
Category
Article
ISSN
0895-2477

No coin nor oath required. For personal study only.

✦ Synopsis

Abstract

This article presents a methodology for developing small‐signal behavioral electromagnetic (EM) models of p‐i‐n photodiodes (PDs) for high‐speed applications. The EM model includes RC bandwidth limitation effect and transit‐time effect. The model is capable of accurately modeling arbitrary complex parasitics of PD chips. It can be used to predict the optical‐to‐electrical (O/E) response of PDs with various p‐i‐n junction structures in the frequency domain at the behavioral level. Compared to equivalent circuit models, EM models avoid developing complicated circuit network to represent complex chip parasitics as well as extracting parasitic values and provide straightforward access to EM characteristics of devices. © 2011 Wiley Periodicals, Inc. Microwave Opt Technol Lett 53:2530–2533, 2011; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.26327

📜 SIMILAR VOLUMES

MODELLING OF P-I-N PHOTODIODES UNDER HIG
MODELLING OF P-I-N PHOTODIODES UNDER HIGH ILLUMINATION CONDITIONS
✍ S. P. WILSON; S. J. WOODS; A. B. WALKER 📂 Article 📅 1997 🏛 John Wiley and Sons 🌐 English ⚖ 275 KB

The response of a p-i-n photodetector made from gallium arsenide to both steady-state and transient illumination has been modelled. Both an ensemble Monte-Carlo model and a drift-diffusion model were used, the latter with the choice of two different mobility models. The effects of high intensity ste

A fully analytical model to describe the
A fully analytical model to describe the high-frequency behavior of p-i-n photodiodes
✍ G. Torrese; A. Salamone; I. Huynen; A. Vander Vorst 📂 Article 📅 2001 🏛 John Wiley and Sons 🌐 English ⚖ 193 KB

## Abstract This paper presents a novel fully analytical model describing the high‐frequency behavior of __p__‐__i__‐__n__ photodiodes. The transport equations are solved, taking into account the dependence of the carrier velocities on the electric field, while the RC‐product effect is considered b

Small-signal lumped-element modeling of
Small-signal lumped-element modeling of P-I-N photodiode
✍ Ang Miao 📂 Article 📅 2011 🏛 John Wiley and Sons 🌐 English ⚖ 305 KB

## Abstract A small‐signal lumped‐element modeling technique for P‐I‐N photodiodes is presented.The model is extracted by fitting model's components with the accurately measured S parameters using the genetic algorithm. Experimental results indicate the extracted model is well matched to the measur