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Characterization of InP/GaInAs/InP heterostructures grown by organometallic vapor phase epitaxy for high-speed p-i-n photodiodes

✍ Scribed by K.W. Carey; S.Y. Wang; R. Hull; J.E. Turner; D. Oertel; R. Bauer; D. Bimberg


Publisher
Elsevier Science
Year
1986
Tongue
English
Weight
497 KB
Volume
77
Category
Article
ISSN
0022-0248

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