✦ LIBER ✦

Small-signal lumped-element modeling of P-I-N photodiode

✍ Scribed by Ang Miao

Publisher: John Wiley and Sons
Year: 2011
Tongue: English
Weight: 305 KB
Volume: 53
Category: Article
ISSN: 0895-2477
DOI: 10.1002/mop.25971

No coin nor oath required. For personal study only.

✦ Synopsis

Abstract

A small‐signal lumped‐element modeling technique for P‐I‐N photodiodes is presented.The model is extracted by fitting model's components with the accurately measured S parameters using the genetic algorithm. Experimental results indicate the extracted model is well matched to the measured data in the frequency range from 130 MHz to 20 GHz. © 2011 Wiley Periodicals, Inc. Microwave Opt Technol Lett 53:1416–1419, 2011; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.25971

📜 SIMILAR VOLUMES

MODELLING OF P-I-N PHOTODIODES UNDER HIG

MODELLING OF P-I-N PHOTODIODES UNDER HIGH ILLUMINATION CONDITIONS

✍ S. P. WILSON; S. J. WOODS; A. B. WALKER 📂 Article 📅 1997 🏛 John Wiley and Sons 🌐 English ⚖ 275 KB

The response of a p-i-n photodetector made from gallium arsenide to both steady-state and transient illumination has been modelled. Both an ensemble Monte-Carlo model and a drift-diffusion model were used, the latter with the choice of two different mobility models. The effects of high intensity ste

Behavioral electromagnetic models of hig

Behavioral electromagnetic models of high-speed p-i-n photodiodes

✍ Chenhui Jiang; Viktor Krozer; Tom K. Johansen; Heinz-Gunter Bach; Giorgis G. Mek 📂 Article 📅 2011 🏛 John Wiley and Sons 🌐 English ⚖ 545 KB

## Abstract This article presents a methodology for developing small‐signal behavioral electromagnetic (EM) models of p‐i‐n photodiodes (PDs) for high‐speed applications. The EM model includes RC bandwidth limitation effect and transit‐time effect. The model is capable of accurately modeling arbitr

A fully analytical model to describe the

A fully analytical model to describe the high-frequency behavior of p-i-n photodiodes

✍ G. Torrese; A. Salamone; I. Huynen; A. Vander Vorst 📂 Article 📅 2001 🏛 John Wiley and Sons 🌐 English ⚖ 193 KB

## Abstract This paper presents a novel fully analytical model describing the high‐frequency behavior of __p__‐__i__‐__n__ photodiodes. The transport equations are solved, taking into account the dependence of the carrier velocities on the electric field, while the RC‐product effect is considered b

The small signal a.c. impedance of galli

The small signal a.c. impedance of gallium arsenide and silicon p-i-n diodes

✍ Robert H. Caverly; Gerald Hiller 📂 Article 📅 1990 🏛 Elsevier Science 🌐 English ⚖ 802 KB

A finite-element model and characterizat

A finite-element model and characterization of the p-i-n magnetodiode at microwave frequencies

✍ Robert Caverly; Edward Peck 📂 Article 📅 1987 🏛 Elsevier Science 🌐 English ⚖ 415 KB

Finite element modelling of vertical dra

Finite element modelling of vertical drains beneath embankments on soft ground : Hird, C C; Pyrah, I C; Russell, D GeotechniqueV42, N3, Sept 1992, P499–511

📂 Article 📅 1993 🏛 Elsevier Science 🌐 English ⚖ 128 KB 👁 1 views