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Barrier optimization of metal-semiconductor junctions for high power Schottky rectifiers

✍ Scribed by GA Sarov; IV Katardjiev; NI Stoeva


Publisher
Elsevier Science
Year
1986
Tongue
English
Weight
436 KB
Volume
36
Category
Article
ISSN
0042-207X

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πŸ“œ SIMILAR VOLUMES


Analytical performance evaluation of AlG
✍ Ruchika Aggarwal; Anju Agrawal; Mridula Gupta; R. S. Gupta πŸ“‚ Article πŸ“… 2008 πŸ› John Wiley and Sons 🌐 English βš– 475 KB

## Abstract In this work, a comprehensive analytical model for AlGaN/GaN MISHFET has been presented to evaluate the drain current characteristics, transconductance, and cut‐off frequency of the insulated device. The model takes into account polynomial dependence of sheet carrier density on position