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Barrier height inhomogeneities in InN/GaN heterostructure based Schottky junctions

โœ Scribed by Basanta Roul; Thirumaleshwara N. Bhat; Mahesh Kumar; Mohana K. Rajpalke; Neeraj Sinha; A.T. Kalghatgi; S.B. Krupanidhi


Book ID
113915482
Publisher
Elsevier Science
Year
2011
Tongue
English
Weight
499 KB
Volume
151
Category
Article
ISSN
0038-1098

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โœ Picozzi, S. ;Continenza, A. ;Massidda, S. ;Freeman, A.J. ๐Ÿ“‚ Article ๐Ÿ“… 2002 ๐Ÿ› John Wiley and Sons ๐ŸŒ English โš– 109 KB

We performed ab-initio full-potential linearized augmented plane wave (FLAPW) calculations for [0001]-wurtzite and [111]-zincblende GaN/Al junctions, focusing on the Schottky barrier height. We propose a procedure to evaluate the potential discontinuity in the presence of electric fields, showing th