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Schottky Barrier Height in GaN/Al Junctions: an ab-initio Study

✍ Scribed by Picozzi, S. ;Continenza, A. ;Massidda, S. ;Freeman, A.J.

Publisher: John Wiley and Sons
Year: 2002
Tongue: English
Weight: 109 KB
Volume: 190
Category: Article
ISSN: 0031-8965
DOI: 10.1002/1521-396x(200203)190:1<257::aid-pssa257>3.0.co;2-i

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✦ Synopsis

We performed ab-initio full-potential linearized augmented plane wave (FLAPW) calculations for [0001]-wurtzite and [111]-zincblende GaN/Al junctions, focusing on the Schottky barrier height. We propose a procedure to evaluate the potential discontinuity in the presence of electric fields, showing that their effect is relatively small (a few tenths of an eV). These calculations assess the rectifying behaviour of the GaN/Al contact, in agreement with experimental values for the barrier.

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