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Barrier behaviour of plasma deposited silicon oxide and nitride against Cu diffusion

โœ Scribed by M. Vogt; K. Drescher

Publisher
Elsevier Science
Year
1995
Tongue
English
Weight
326 KB
Volume
91
Category
Article
ISSN
0169-4332

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Advanced back-end processing requires the integration of low-k dielectrics and Cu. To successfully integrate these materials, plasma deposited films for hard mask use with good resistance to wet chemicals, aggressive etch and chemical mechanical polishing are essential. As a solution to providing qu