Bandgap tuning of semiconductor quantum well structures using ion implantation

✍ Scribed by P.G. Piva; P.J. Poole; S. Charbonneau; E.S. Koteles; M. Buchanan; G. Aers; A.P. Roth; Z.R. Wasilewski; J. Beauvals; R.D. Goldberg

• Book ID: 102620073
• Publisher: Elsevier Science
• Year: 1994
• Tongue: English
• Weight: 199 KB
• Volume: 15
• Category: Article
• ISSN: 0749-6036
• DOI: 10.1006/spmi.1994.1075

✦ Synopsis

Ion induced QW intermixing using broad area and focused ion beam (FIB) implantation was investigated at low energy ( 32 and (100 \mathrm{keV}) respectively) in three different material systems (GaAs/AlGaAs, InGaAs/GaAs, and lattice matched InGaAs/InP). Repeated sequential ion implants and rapid thermal anneals (RTAs) were successful in delivering several times the maximum QW bandgap shift achievable by a single implant/RTA cycle. The effectiveness of broad area high energy implantation (\left(8 \mathrm{MeV} \mathrm{As}{ }^{4+}\right.) ) on (\mathrm{QW}) intermixing was also established for GRINSCH (graded-index separate confinement heterostructure) QW laser structures grown in InGaAs/GaAs. Lastly, preliminary work illustrating the effects of implant temperature and ion current density wás carried out for InGaAs/GaAs QWs.