𝔖 Bobbio Scriptorium

✦ LIBER ✦

Bandgap engineering of group IV materials for complementary n and p tunneling field effect transistors

✍ Scribed by Kotlyar, R.; Avci, U. E.; Cea, S.; Rios, R.; Linton, T. D.; Kuhn, K. J.; Young, I. A.

Book ID: 120226885
Publisher: American Institute of Physics
Year: 2013
Tongue: English
Weight: 615 KB
Volume: 102
Category: Article
ISSN: 0003-6951
DOI: 10.1063/1.4798283

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

[IEEE 2014 72nd Annual Device Research C

[IEEE 2014 72nd Annual Device Research Conference (DRC) - Santa Barbara, CA, USA (2014.6.22-2014.6.25)] 72nd Device Research Conference - Voltage scalability of double-gate ultra-thin-body field-effect transistors with channel materials from group IV, III-V to 2D-materials based on ITRS metrics for year 2018 and beyond

✍ Low, Kain Lu; Yeo, Yee-Chia; Liang, Gengchiau 📂 Article 📅 2014 🏛 IEEE ⚖ 393 KB

[IEEE 2011 IEEE International Electron D

[IEEE 2011 IEEE International Electron Devices Meeting (IEDM) - Washington, DC, USA (2011.12.5-2011.12.7)] 2011 International Electron Devices Meeting - Fabrication, characterization, and physics of III–V heterojunction tunneling Field Effect Transistors (H-TFET) for steep sub-threshold swing

✍ Dewey, G.; Chu-Kung, B.; Boardman, J.; Fastenau, J. M.; Kavalieros, J.; Kotlyar, 📂 Article 📅 2011 🏛 IEEE ⚖ 620 KB