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[IEEE 2014 72nd Annual Device Research Conference (DRC) - Santa Barbara, CA, USA (2014.6.22-2014.6.25)] 72nd Device Research Conference - Voltage scalability of double-gate ultra-thin-body field-effect transistors with channel materials from group IV, III-V to 2D-materials based on ITRS metrics for year 2018 and beyond

✍ Scribed by Low, Kain Lu; Yeo, Yee-Chia; Liang, Gengchiau


Book ID
125923013
Publisher
IEEE
Year
2014
Weight
393 KB
Category
Article
ISBN
1479954055

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