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Band structure investigations of GaN films using modulation spectroscopy

✍ Scribed by V.P. Makhniy; M.M. Slyotov; V.V. Gorley; P.P. Horley; Yu.V. Vorobiev; J. González-Hernández


Publisher
Elsevier Science
Year
2006
Tongue
English
Weight
140 KB
Volume
253
Category
Article
ISSN
0169-4332

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## Abstract The crystal quality of GaN thin film on silicon using GaN/AlN superlattice structures was investigated. The growth was carried out on Si(111) for GaN(0001) in a metal‐organic vapor phase epitaxy system. Various GaN/AlN superlattice intermediate layers have been designed to decrease the