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Band structure effect on the hole drift velocity in Si at 5K

✍ Scribed by C. Canali; A. Loria; F. Nava; G. Ottaviani

Publisher
Elsevier Science
Year
1972
Tongue
English
Weight
153 KB
Volume
41
Category
Article
ISSN
0375-9601

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The hole wavefunctions, the energy levels and the sheet density of a strained p-Si/Si 1-x Ge x /p-Si selectively doped double heterojunction are investigated at T = 0 K, solving the SchrΓΆdinger and Poisson equations self-consistently. We present a systematic study taking into account all the modulat