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Band offsets of(mathrm{Er}_{2}mathrm{O}_{3})films grown on Ge substrates by X-ray photoelectron spectroscopy

✍ Scribed by Ji, Ting; Peng, Lining; Fang, Zebo; Cui, Yanxia; Hao, Yuying

Book ID
125344962
Publisher
Springer
Year
2013
Tongue
English
Weight
362 KB
Volume
115
Category
Article
ISSN
1432-0630

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## Abstract Hexagonal Ge~3~N~4~ layer was prepared on Ge surface by __in situ__ direct atomic source nitridation and it is promising buffer layer to grow GaN on Ge (111). The valence band offset (VBO) of GaN/Ge~3~N~4~/Ge heterojunctions is determined by X‐ray photoemission spectroscopy. The valence