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Band offsets at Ge/GeO2 interfaces: Effect of different interfacial bonding patterns

✍ Scribed by Peter Broqvist; Jan Felix Binder; Alfredo Pasquarello


Book ID
104052979
Publisher
Elsevier Science
Year
2011
Tongue
English
Weight
311 KB
Volume
88
Category
Article
ISSN
0167-9317

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GeO 2 was proposed as valuable passivation layer at the surface with Ge to integrate oxide with high dielectric constant in Ge-based logic devices. Hence, the identification of the defects present at different Ge/GeO 2 interfaces becomes a mandatory issue to predict the electrical features of device