Impact of Interfacial Oxygen Content on Bonding, Stability, Band Offsets, and Interface States of GaAs:HfO 2 Interfaces

✍ Scribed by Wang, Weichao; Xiong, Ka; Wallace, Robert M.; Cho, Kyeongjae

• Book ID: 118744357
• Publisher: American Chemical Society
• Year: 2010
• Tongue: English
• Weight: 591 KB
• Volume: 114
• Category: Article
• ISSN: 1932-7447
• DOI: 10.1021/jp107880r