Band mapping of MBE-grown AlAs(1 0 0)
β Scribed by J. Kanski; P.O. Nilsson; U.O. Karlsson; S.P. Svensson
- Book ID
- 103386656
- Publisher
- Elsevier Science
- Year
- 1991
- Tongue
- English
- Weight
- 182 KB
- Volume
- 77
- Category
- Article
- ISSN
- 0038-1098
No coin nor oath required. For personal study only.
π SIMILAR VOLUMES
E ectively atomically at GaAs=AlAs interfaces over a macroscopic area ("super-at interfaces") have been realized in GaAs=AlAs and GaAs=(GaAs)2 (AlAs)2 quantum wells (QWs) grown on (4 1 1)A GaAs substrates by molecular beam epitaxy (MBE). A single and very sharp photoluminescence (PL) peak was observ
We characterize structural and magnetic properties of the dilute magnetic semiconductor (In,Mn)Sb grown on GaAs (0 0 1) by molecular beam epitaxy. The films have surface features consisting of dense orthogonally oriented strain-driven hillocks. In addition, triangularly shaped hillocks, presumed to
A highly mismatched Mo/SrTiO 3 system was found to develop two non-equivalent orientation relationships between the metal film and the ceramic substrate. The molybdenum films, with a nominal thickness of 50 nm, were deposited by molecular beam epitaxy at T substrate ΒΌ 600 Β°C. The film and the substr