Band hybridization effect in InAs/GaSb based quantum wells
β Scribed by Wei, X.F.; Gong, Y.P.; Long, M.S.; Yang, C.H.; Liu, L.W.
- Book ID
- 122361156
- Publisher
- Elsevier Science
- Year
- 2013
- Tongue
- English
- Weight
- 277 KB
- Volume
- 377
- Category
- Article
- ISSN
- 0375-9601
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π SIMILAR VOLUMES
We demonstrate theoretically that the many-body effect such as exchange interaction can cause the hybridization of the electron and hole dispersion relations in InAs/GaSb based type II and broken-gap quantum well (QW) systems. As a result, a terahertz mini-gap at the anti-crossing points of the cond
Far infrared magneto-optical measurements have been performed on a series of InAs single quantum wells (11-30 nm) clad with thick GaSb layers where either GaAs-like or InSb-like bonds are formed at the heterointerfaces. The rich absorption spectra are found to have both 'interband' and 'intraband' (