Exchange-induced band hybridization in InAs/GaSb based type II and broken-gap quantum well systems

✍ Scribed by W. Xu; Z. Zeng; A.R. Wright; C. Zhang; J. Zhang; T.C. Lu

• Publisher: Elsevier Science
• Year: 2009
• Tongue: English
• Weight: 188 KB
• Volume: 40
• Category: Article
• ISSN: 0026-2692
• DOI: 10.1016/j.mejo.2008.11.054

✦ Synopsis

We demonstrate theoretically that the many-body effect such as exchange interaction can cause the hybridization of the electron and hole dispersion relations in InAs/GaSb based type II and broken-gap quantum well (QW) systems. As a result, a terahertz mini-gap at the anti-crossing points of the conduction and valence bands can be induced by the inter-layer electron-hole coupling via the Coulomb interaction. It is shown that the many-body effect is another important source of the hybridization of the dispersion relations in InAs/GaSb QW systems.