Electron–hole hybridizing in InAs single quantum wells clad with GaSb

✍ Scribed by R.J. Wagner; B.V. Shanabrook; M.J. Yang; J.R. Waterman

• Publisher: Elsevier Science
• Year: 1997
• Tongue: English
• Weight: 138 KB
• Volume: 21
• Category: Article
• ISSN: 0749-6036
• DOI: 10.1006/spmi.1996.0176

✦ Synopsis

Far infrared magneto-optical measurements have been performed on a series of InAs single quantum wells (11-30 nm) clad with thick GaSb layers where either GaAs-like or InSb-like bonds are formed at the heterointerfaces. The rich absorption spectra are found to have both 'interband' and 'intraband' (electron and hole cyclotron resonance) characteristics. From these results, the k = 0 subband energy gap has been determined and electron and hole effective masses estimated as functions of interface bond type and InAs well width. The electron-hole hybridization has subtle effects on the data and suggests a small hybridized energy.