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Band-gap narrowing in highly doped n- and p-type GaAs studied by photoluminescence spectroscopy

✍ Scribed by Borghs, G.; Bhattacharyya, K.; Deneffe, K.; Van Mieghem, P.; Mertens, R.

Book ID: 125462734
Publisher: American Institute of Physics
Year: 1989
Tongue: English
Weight: 785 KB
Volume: 66
Category: Article
ISSN: 0021-8979
DOI: 10.1063/1.343958

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