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Band alignment and conversion efficiency in Si/Ge type-II quantum dot intermediate band solar cells

✍ Scribed by Kechiantz, A M; Kocharyan, L M; Kechiyants, H M

Book ID
121305111
Publisher
Institute of Physics
Year
2007
Tongue
English
Weight
398 KB
Volume
18
Category
Article
ISSN
0957-4484

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This paper introduces the idea of achieving an intermediate band solar cell using a three-dimensional array of type II broken gap quantum dots. The determining factor is that electrons and holes must be conΓΏned in di erent and adjacent quantum dots. The overlap between bounded states of the adjacent