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Type II broken band heterostructure quantum dot to obtain a material for the intermediate band solar cell

✍ Scribed by L Cuadra; A Martı́; A Luque

Publisher: Elsevier Science
Year: 2002
Tongue: English
Weight: 144 KB
Volume: 14
Category: Article
ISSN: 1386-9477
DOI: 10.1016/s1386-9477(02)00370-3

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✦ Synopsis

This paper introduces the idea of achieving an intermediate band solar cell using a three-dimensional array of type II broken gap quantum dots. The determining factor is that electrons and holes must be conÿned in di erent and adjacent quantum dots. The overlap between bounded states of the adjacent quantum dots induces a half-ÿlled intermediate band and three separate quasi-Fermi levels for describing, in non-equilibrium conditions, the carrier concentration in the valence, intermediate and conduction bands. InAs=GaSb could be an adequate material system for manufacturing the array of dots.