✦ LIBER ✦

Background limited performance in p-doped GaAs/Ga0.71In0.29As0.39P0.61 quantum well infrared photodetectors

✍ Scribed by Hoff, J.; Kim, S.; Erdtmann, M.; Williams, R.; Piotrowski, J.; Bigan, E.; Razeghi, M.; Brown, G. J.

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Growth of Ga0.29In0.71As0.61P0.39 (λ ≈ 1

✍ K. Tappura; H. Asonen 📂 Article 📅 1993 🏛 Elsevier Science 🌐 English ⚖ 362 KB

High power, 0.98 μm, Ga0.8In0.2As/GaAs/G

✍ Mobarhan, K.; Razeghi, M.; Marquebielle, G.; Vassilaki, E. 📂 Article 📅 1992 🏛 American Institute of Physics 🌐 English ⚖ 519 KB

Electronic transport in strained p-modul

✍ Gunes, Mustafa; Gumus, Cebrail 📂 Article 📅 2014 🏛 Taylor and Francis Group 🌐 English ⚖ 261 KB

Coherent oscillations of holes in GaAs0.

✍ KHAN, SALAHUDDIN; JAYABALAN, J; SINGH, ASHA; CHARI, RAMA; PAL, SUPARNA; PORWAL, 📂 Article 📅 2014 🏛 Springer-Verlag 🌐 English ⚖ 868 KB

Infrared absorption of an In[sub 0.2]Ga[

✍ Son, Heesoo; Park, Jinsung; Hong, Songcheol; Jo, Sung-June; Song, Jong-In 📂 Article 📅 2001 🏛 American Institute of Physics 🌐 English ⚖ 368 KB

Quantum-well Hall devices in Si-delta-do

✍ Jeong-Soo Lee; Kwang-Ho Ahn; Yoon-Ha Jeong; Dae Mann Kim 📂 Article 📅 1996 🏛 IEEE 🌐 English ⚖ 759 KB