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Quantum-well Hall devices in Si-delta-doped Al0.25Ga0.75As/GaAs and pseudomorphic Al0.25 Ga0.75As/In0.25Ga0.75As/GaAs heterostructures grown by LP-MOCVD: performance comparisons

โœ Scribed by Jeong-Soo Lee; Kwang-Ho Ahn; Yoon-Ha Jeong; Dae Mann Kim

Book ID
114536594
Publisher
IEEE
Year
1996
Tongue
English
Weight
759 KB
Volume
43
Category
Article
ISSN
0018-9383

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The magneto-optical absorption spectrum of a \(D^{-}\)ion in a \(\mathrm{GaAs}_{-} \mathrm{Ga}_{0.75} \mathrm{Al}_{0.25} \mathrm{As}\) quantum well is calculated. We used the variational method based on a two orbital picture of a \(D^{-}\)ion, in which each single electron orbital is represented by