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Back Cover: phys. stat. sol. (a) 205/10

Book ID: 105365386
Publisher: John Wiley and Sons
Year: 2008
Tongue: English
Weight: 385 KB
Volume: 205
Category: Article
ISSN: 0031-8965
DOI: 10.1002/pssa.200890013

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✦ Synopsis

Abstract

The picture on the back cover shows a schematic depiction of the structure of a phase‐change memory cell using Ge~2~Sb~5~Te~5~ (GST) material (center part). During programming, the GST material is heated by the Joule effect of a current flowing through the element, and the highest temperature is obtained at the bottom electrode (heater). Phase transitions in the active GST part occur either by heating the material above the melting temperature, followed by quenching in the amorphous phase during a reset current pulse; or by heating below the melting point causing crystallization during a set current pulse (see left picture). The read‐out resistance of the element is low for the crystallized state and high for the amorphous state, as depicted in the program characteristics (see right picture). For more details see the Feature Article by A. L. Lacaita and D. J. Wouters on pp. 2281–2297. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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