✦ LIBER ✦

Back Cover: phys. stat. sol. (a) 205/11

Book ID: 105365388
Publisher: John Wiley and Sons
Year: 2008
Tongue: English
Weight: 738 KB
Volume: 205
Category: Article
ISSN: 0031-8965
DOI: 10.1002/pssa.200890015

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✦ Synopsis

Abstract

The Editor's Choice article by Min Soo Youm et al. (pp. 2657–2661) investigates the physical properties of phase‐change random access memory (PRAM) devices made of Ge~2~Sb~2~Te~5~ (GST) sputtered thin films. To observe changes in the atomic structure the authors prepared specimens for transmission electron microscopy (TEM) and measured the threshold voltage as well as initial resistance variation of phase‐change devices.

Corresponding author Dr. Yong Tae Kim is a principal scientist in the Semiconductor Materials and Devices Laboratory of the Korea Institute of Science and Technology. His research activities are divided into three main areas: materials and devices related to non‐volatile memory applications (FeRAM, PRAM, ReRAM), second, bio‐sensors and bio‐materials, and, third, nano‐materials and devices.

For a recently published Feature Article on the topic of phase‐change memories see also: Andrea L. Lacaita and Dirk J. Wouters, phys. stat. sol. (a) 205, 2281 (2008). (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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