Auger Depth Profile Analysis of Deeply Buried Interfaces
β Scribed by Barna, A. ;Menyhard, M.
- Publisher
- John Wiley and Sons
- Year
- 1994
- Tongue
- English
- Weight
- 832 KB
- Volume
- 145
- Category
- Article
- ISSN
- 0031-8965
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π SIMILAR VOLUMES
conduction band potential obtained from the threshold measurements shows only a small deviation from a fiat band, less than β’ i 0.05 eV, tip to a point 4 A, from the silicon surface. There is no indication of a large ionic charge or of a greatly reduced SiO, bandgap to within about two lattice units
A reΓned approach to the calculation of Auger depth proΓles by means of principal component analysis (PCA) is presented. The reΓnement consists of the use of normalized spectra. In this way, a more reliable determination of the number of chemical compounds and their location in the depth proΓle is p