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Atomistic simulation of ion channeling in heavily doped Si:As

✍ Scribed by A. Satta; E. Albertazzi; M. Bianconi; G. Lulli; S. Balboni; L. Colombo

Publisher: Elsevier Science
Year: 2005
Tongue: English
Weight: 146 KB
Volume: 230
Category: Article
ISSN: 0168-583X
DOI: 10.1016/j.nimb.2004.12.027

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