✦ LIBER ✦
Investigation of heavily damaged ion implanted Si by atomistic simulation of Rutherford backscattering channeling spectra
✍ Scribed by G. Lulli; E. Albertazzi; M. Bianconi; A. Satta; S. Balboni; L. Colombo; A. Uguzzoni
- Publisher
- Elsevier Science
- Year
- 2005
- Tongue
- English
- Weight
- 140 KB
- Volume
- 230
- Category
- Article
- ISSN
- 0168-583X
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