In this paper, the physics of the retardation of boron diffusion in a germanium pre-amorphized (Ge PAI) silicon substrate is reported through the kinetic Monte Carlo (KMC) approach. In order to investigate the mechanism of the retardation of boron diffusion for Ge PAI silicon, the temporal behaviour
✦ LIBER ✦
Atomistic modeling of FnVm complexes in pre-amorphized Si
✍ Scribed by Pedro Lopez; Lourdes Pelaz; María Aboy; G. Impellizeri; S. Mirabella; F. Priolo; E. Napolitani
- Publisher
- Elsevier Science
- Year
- 2008
- Tongue
- English
- Weight
- 433 KB
- Volume
- 154-155
- Category
- Article
- ISSN
- 0921-5107
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