Atomistic modelling for boron diffusion profile in silicon posterior to germanium pre-amorphization
✍ Scribed by Joong-sik Kim; Taeyoung Won
- Publisher
- Elsevier Science
- Year
- 2007
- Tongue
- English
- Weight
- 968 KB
- Volume
- 84
- Category
- Article
- ISSN
- 0167-9317
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✦ Synopsis
In this paper, the physics of the retardation of boron diffusion in a germanium pre-amorphized (Ge PAI) silicon substrate is reported through the kinetic Monte Carlo (KMC) approach. In order to investigate the mechanism of the retardation of boron diffusion for Ge PAI silicon, the temporal behaviour of self-interstitials as well as the evolution of various kinds of boron clusters is calculated via a fine time-scale KMC calculation. Our KMC study reveals that both interstitials and vacancies in the germanium pre-amorphized area disappear very rapidly, followed by retardation of boron diffusion due to the presence of excessive interstitials in the end of range (EOR). Furthermore, we observed that more amount of boron clusters is produced in Ge PAI silicon than the silicon with no PAI. This seems to be due to interstitials arriving from the EOR band generated by the germanium implant.