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Atomic vapour deposition (AVD) of SrBi2Ta2O9 using an all alkoxide precursor

✍ Scribed by Paul R. Chalker; Richard J. Potter; John L. Roberts; Anthony C. Jones; Lesley M. Smith; Marcus Schumacher

Book ID
108165942
Publisher
Elsevier Science
Year
2004
Tongue
English
Weight
229 KB
Volume
272
Category
Article
ISSN
0022-0248

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## Abstract Thin films of tantalum oxide have been deposited on Si(100) substrates using atomic layer deposition (ALD) employing the TaI~5~ and O~2~ precursor combination. Growth was studied in the temperature region 400 to 700 °C. The resulting films were found to be iodine‐free above 450 °C, and