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Atomic layer deposition of Al2O3, ZrO2, Ta2O5, and Nb2O5 based nanolayered dielectrics

✍ Scribed by Kaupo Kukli; Mikko Ritala; Markku Leskelä; Timo Sajavaara; Juhani Keinonen; David Gilmer; Sandeep Bagchi; Lata Prabhu

Book ID
117145724
Publisher
Elsevier Science
Year
2002
Tongue
English
Weight
162 KB
Volume
303
Category
Article
ISSN
0022-3093

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## Abstract Thin films of tantalum oxide have been deposited on Si(100) substrates using atomic layer deposition (ALD) employing the TaI~5~ and O~2~ precursor combination. Growth was studied in the temperature region 400 to 700 °C. The resulting films were found to be iodine‐free above 450 °C, and