Atomic-layer-deposited tantalum silicate as a gate dielectric for III–V MOS devices

✍ Scribed by C. Adelmann; D. Lin; L. Nyns; B. Schepers; A. Delabie; S. Van Elshocht; M. Caymax

• Book ID: 104053022
• Publisher: Elsevier Science
• Year: 2011
• Tongue: English
• Weight: 339 KB
• Volume: 88
• Category: Article
• ISSN: 0167-9317
• DOI: 10.1016/j.mee.2011.03.135