✦ LIBER ✦
Plasma-assisted chemical vapor deposited silicon oxynitride as an alternative material for gate dielectric in MOS devices
✍ Scribed by A. Szekeres; T. Nikolova; S. Simeonov; A. Gushterov; F. Hamelmann; U. Heinzmann
- Publisher
- Elsevier Science
- Year
- 2006
- Tongue
- English
- Weight
- 243 KB
- Volume
- 37
- Category
- Article
- ISSN
- 0026-2692
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