Atomic Layer-deposited Si-nitride/SiO/sub 2/ stack gate dielectrics for future high-speed DRAM with enhanced reliability

✍ Scribed by A. Nakajima; T. Ohashi; Shiyang Zhu; S. Yokoyama; S. Michimata; H. Miyake

• Book ID: 126594770
• Publisher: IEEE
• Year: 2005
• Tongue: English
• Weight: 115 KB
• Volume: 26
• Category: Article
• ISSN: 0741-3106
• DOI: 10.1109/LED.2005.851822