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Atomic layer chemical vapour deposition of copper

✍ Scribed by Anil U. Mane; S.A. Shivashankar


Publisher
Elsevier Science
Year
2004
Tongue
English
Weight
376 KB
Volume
7
Category
Article
ISSN
1369-8001

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Diffusion Barrier Deposition on a Copper
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Diffusion barrier materials, TiN and WN, were deposited by atomic layer deposition (ALD). The chlorine concentration of the TiN film was as low as 1.2 at.-%, and resistivity was below 200 lX cm. Ultra high aspect ratio (AR = 85) trenches were used to assess step coverage. Tungsten nitride film, depo

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## Abstract AIN was deposited pyrolytically by means of the aluminium trichloride‐ammonia process (either introducing both compounds seperately or in complex form) and by plasmachemical reaction of aluminium trichloride with nitrogen at temperatures from 600 to 1300Β°C. Layers deposited onto (100) s