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Atomic force microscopy investigation of the O2+-induced surface topography of InP

✍ Scribed by Pan, J. S.; Tay, S. T.; Huan, C. H. A.; Wee, A. T. S.

Publisher: John Wiley and Sons
Year: 1998
Tongue: English
Weight: 624 KB
Volume: 26
Category: Article
ISSN: 0142-2421
DOI: 10.1002/(sici)1096-9918(199811)26:12<930::aid-sia440>3.0.co;2-o

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✦ Synopsis

The surface topography development of InP as a function of ion energy and incident angle was investigated O 2 ' using atomic force microscopy (AFM). Cone formation was found to be the dominant surface feature under various ion bombarding conditions. However, variations in the density and size of the cones at di †erent ion O 2 ' O 2 ' bombardment conditions were observed. The variation of surface topography with ion bombardment condi-O 2 ' tions is correlated with changes in InP surface composition. The results support an intrinsic model of cone formation, which postulates that the sputtering of InP causes In enrichment at the surface due to the preferential sputtering of phosphorus from InP. Furthermore, radiation-enhanced surface di †usion results in agglomeration of indium atoms into indium clusters. These indium clusters seed the development of sputter cones due to the di †erence in sputter rates of InP and indium.

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